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Samsung and Toshiba to support toggle DDR 2.0 NAND

NAND late last year served as an initial pathway for stimulating acceptance of the new high-performance toggle DDR technology.Toggle DDR provides a faster interface than conventional NAND using an asynchronous design, delivering the benefits of high-speed data transfer to a wider market…..

Samsung and Toshiba have agreed to develop a high-performance NAND flash memory that will use toggle DDR 2.0 specification with 400Mbps interface. The new NAND memory is said to be beneficial to NAND-based consumer electronics goods and both Samsung as well as Toshiba will support it to allow broad-scale adoption amongst NAND vendors and customers.

Samsung and Toshiba have revealed a bit of what they are up to with their development of high-performance NAND flash memory.Researchers from the two have been working on double data rate (DDR) NAND flash memory with a 400Mbps interface, toggle DDR 2.0 specification.The high-performance NAND memory is expected to be of immediate benefit to a host of NAND-based mobile and consumer electronics makers.Samsung and Toshiba said that they will support a standard industry specification to enable broad-scale acceptance of this high-speed technology.

Toggle DDR provides a faster interface than conventional NAND using an asynchronous design, delivering the benefits of high-speed data transfer to a wider market, such as for solid state drive (SSD) applications including enterprise storage, mobile phones, multimedia terminals and consumer products.Masaki Momodomi, technical executive for memory products at Toshiba said the next stage is to create standard, high-speed NAND Flash interface products with NAND vendors and customers.

The new toggle DDR 2.0 spec provides a three-fold increase over toggle DDR 1.0 (133Mbps) and a ten-fold increase over SDR NAND (40Mbps).

Resources :samsunghub.com,theinquirer.net

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